Novel dielectrics for SOI structures

Author

Annamalai, N.K. ; Chapski, Joseph

Author_Institution

Rome Air Dev. Center, Hanscom AFB, MA, USA

fYear

1990

fDate

2-4 Oct 1990

Firstpage

59

Lastpage

60

Abstract

Two novel dielectrics for SOI structures are proposed. They are diamond and silicon carbide, replacing the silicon dioxide dielectric currently used in SOI structures. The authors report on some preliminary results of fabrication of buried diamond silicon-on-insulator structures by the zone melting recrystallization technique. Diamond grown by CVD (chemical vapor deposition) on silicon is chosen as the substrate. The CVD diamond film was grown on a 3" silicon wafer. A Raman spectrum peak was seen at 1334-35 cm^-1, indicating that the film is diamond. Crystal size and growth characteristics were studied using high frequency capacitance and leakage current through the diamond film

Keywords

diamond; elemental semiconductors; incoherent light annealing; integrated circuit technology; leakage currents; recrystallisation; semiconductor epitaxial layers; semiconductor growth; semiconductor-insulator boundaries; silicon; silicon compounds; solid phase epitaxial growth; zone melting; C-Si; CVD diamond; Raman spectrum peak; SIMOX type; SOI structures; Si substrate; SiC-Si; ULSI; buried structures; fabrication; growth characteristics; high frequency capacitance; leakage current; zone melting recrystallization; Capacitance; Chemical vapor deposition; Dielectric substrates; Fabrication; Frequency; Leakage current; Semiconductor films; Silicon carbide; Silicon compounds; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

SOS/SOI Technology Conference, 1990., 1990 IEEE

Conference_Location

Key West, FL

Print_ISBN

0-87942-573-3

Type

conf

DOI

10.1109/SOSSOI.1990.145709

Filename

145709