Title :
Improved speed and accuracy for optical reflectance profiling of SIMOX wafers
Author :
Johnson, E.A. ; Dudkin, A.
Author_Institution :
Spire Corp., Bedford, MA, USA
Abstract :
An ongoing program to develop manufacturing technology which will improve the availability and reduce the cost of SIMOX wafers is reported. A major thrust of this program is the identification of characterization and measurement techniques for in-process monitoring of SIMOX wafers. An improved method is developed for using optical reflectance to measure oxygen concentration versus depth in as-implanted and as-annealed SIMOX wafers. This method improves the speed of the fitting calculation by more than a factor of 2000 while improving the accuracy by more than an order of magnitude
Keywords :
automatic optical inspection; doping profiles; elemental semiconductors; integrated circuit technology; ion implantation; reflectivity; semiconductor-insulator boundaries; silicon; NDE; SIMOX wafers; Si-SiO2; accuracy; in-process monitoring; measurement techniques; optical reflectance profiling; Absorption; Annealing; Fitting; Manufacturing; Optical films; Optical refraction; Optical variables control; Reflectivity; Slabs; Wavelength measurement;
Conference_Titel :
SOS/SOI Technology Conference, 1990., 1990 IEEE
Conference_Location :
Key West, FL
Print_ISBN :
0-87942-573-3
DOI :
10.1109/SOSSOI.1990.145713
