New insights into NBTI reliability in UTBOX-FDSOI PMOS transistors

Author

Angot, D. ; Rideau, D. ; Bravaix, A. ; Monsieur, F. ; Randriamihaja, Y. Mamy ; Huard, Vincent

Author_Institution

STMicroelectron., Crolles, France

fYear

2012

fDate

14-18 Oct. 2012

Firstpage

70

Lastpage

73

Abstract

Based on capacitive measurements combined with TCAD simulations, in a wide range of bulk biases, the impact of NBTI on both oxide-silicon interfaces of FDSOI transistors is evaluated. Physical modeling is proposed to fully analyze the degradation mechanisms and reproduce the experimental behaviors through the help of accurate simulations of the back bias dependence in the FDSOI structure.

Keywords

MOSFET; capacitance measurement; electronic engineering computing; semiconductor device reliability; silicon-on-insulator; technology CAD (electronics); FDSOI structure; NBTI reliability; Si; TCAD simulations; UTBOX-FDSOI PMOS transistors; back bias dependence; bulk biases; capacitive measurements; degradation mechanisms; oxide-silicon interfaces; physical modeling; ultra thin buried oxide; Degradation; Electrostatics; Integrated circuit reliability; Logic gates; Performance evaluation; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report (IRW), 2012 IEEE International

Conference_Location

South Lake Tahoe, CA

ISSN

1930-8841

Print_ISBN

978-1-4673-2749-7

Type

conf

DOI

10.1109/IIRW.2012.6468923

Filename

6468923