Optoelectronic Mixer Based on Graphene FET

Author

Xurui Mao ; Chantong Cheng ; Beiju Huang ; Zan Zhang ; Sheng Gan ; Hongmei Chen ; Hongda Chen

Author_Institution

Inst. of Semicond., Beijing, China

Volume

36

Issue

3

fYear

2015

fDate

Mar-15

Firstpage

253

Lastpage

255

Abstract

We present optoelectronic mixing phenomenon in graphene FET (GFET) and give a brief analysis for the first time. Demonstrated by a measurement system, two operating modes of optoelectronic mixer (OE-mixer) circuits are proposed, either of them mixing optical and electrical signals directly using a single GFET. Optoelectronic conversion losses of 24 and 35 dB are obtained in a 50-Ω impedance system, respectively. GFET OE-mixer might be of strong importance for radio over fiber systems, millimeter wave, and terahertz frequencies applications.

Keywords

field effect transistors; graphene; measurement systems; mixers (circuits); optoelectronic devices; OE-mixer circuits; electrical signals; graphene FET; loss 24 dB; loss 35 dB; measurement system; millimeter wave applications; mixing optical; operating modes; optoelectronic mixing phenomenon; radio over fiber systems; single GFET; terahertz frequencies applications; Detectors; Field effect transistors; Graphene; Impedance; Logic gates; Mixers; Photoconductivity; FETs; graphene; mixer; optoelectronic;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2396038

Filename

7018935