Title :
A quantitative modeling of In0.53Ga0.47As/In 0.52Al0.48As multi-quantum well structures using photocurrent and transmission spectra
Author :
Tanaka, K. ; Tanoue, Y. ; Shibata, K. ; Ueki, Y. ; Kotera, N. ; Washima, M. ; Nakamura, H. ; Mishima, T.
Author_Institution :
Kyushu Inst. of Technol., Iizuka, Japan
Abstract :
Optical transition energies were analyzed for In0.53Ga 0.47As/In0.52Al0.48As multi-quantum well structures with photocurrent and transmission. The calculated eigen-energies agreed with experiments for three modulation-doped specimens of different carrier concentrations. Our modeling that was expressed with absorption coefficients, reproduced quantitatively the transmission experiments at any temperature
Keywords :
III-V semiconductors; absorption coefficients; aluminium compounds; carrier density; eigenvalues and eigenfunctions; gallium arsenide; indium compounds; light transmission; photoconductivity; semiconductor quantum wells; semiconductor superlattices; In0.53Ga0.47As-In0.52Al0.48 As; In0.53Ga0.47As/In0.52Al0.48 As; MQW; absorption coefficients; carrier concentrations; eigen-energies; multi-quantum well structures; optical transition energies; photocurrent; quantitative modeling; three modulation-doped specimens; transmission spectra; Absorption; Indium phosphide; Optical design; Optical modulation; Optoelectronic devices; Photoconductivity; Photodetectors; Quantum well devices; Quantum well lasers; X-ray diffraction;
Conference_Titel :
Compound Semiconductors, 2000 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-6258-6
DOI :
10.1109/ISCS.2000.947140
