Title :
An electro-fluidic assembly technique for integration of III-V devices onto silicon
Author :
Nordquist, Christopher D. ; Smith, Peter A. ; Mayer, Theresa S.
Author_Institution :
Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA
Abstract :
This paper introduces an electro-fluidic assembly approach that provides a potential route towards a low-cost, parallel heterogeneous integration process suitable for III-V device integration. In this process, nonuniform electric fields are used to attract III-V devices from a carrier fluid to a Si substrate patterned with predefined alignment locations. We have demonstrated the utility of this approach by assembling Au die using circular apertures defined on an oxidized Si substrate
Keywords :
III-V semiconductors; electrohydrodynamics; elemental semiconductors; microassembling; silicon; Au; Au die; III-V devices; Si; Si substrate; carrier fluid; circular apertures; electro-fluidic assembly technique; integration; low-cost parallel heterogeneous integration process; nonuniform electric fields; oxidized Si substrate; predefined alignment locations; silicon; Assembly; Costs; Etching; Fabrication; Hybrid integrated circuits; III-V semiconductor materials; Nonuniform electric fields; Silicon; Substrates; Surface topography;
Conference_Titel :
Compound Semiconductors, 2000 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-6258-6
DOI :
10.1109/ISCS.2000.947143
