An electro-fluidic assembly technique for integration of III-V devices onto silicon

Author

Nordquist, Christopher D. ; Smith, Peter A. ; Mayer, Theresa S.

Author_Institution

Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA

fYear

2000

fDate

2000

Firstpage

137

Lastpage

142

Abstract

This paper introduces an electro-fluidic assembly approach that provides a potential route towards a low-cost, parallel heterogeneous integration process suitable for III-V device integration. In this process, nonuniform electric fields are used to attract III-V devices from a carrier fluid to a Si substrate patterned with predefined alignment locations. We have demonstrated the utility of this approach by assembling Au die using circular apertures defined on an oxidized Si substrate

Keywords

III-V semiconductors; electrohydrodynamics; elemental semiconductors; microassembling; silicon; Au; Au die; III-V devices; Si; Si substrate; carrier fluid; circular apertures; electro-fluidic assembly technique; integration; low-cost parallel heterogeneous integration process; nonuniform electric fields; oxidized Si substrate; predefined alignment locations; silicon; Assembly; Costs; Etching; Fabrication; Hybrid integrated circuits; III-V semiconductor materials; Nonuniform electric fields; Silicon; Substrates; Surface topography;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2000 IEEE International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-7803-6258-6

Type

conf

DOI

10.1109/ISCS.2000.947143

Filename

947143