DocumentCode
3436638
Title
Metamorphic In0.53Ga0.47As-In0.52Al0.48 As tunnel diodes grown on GaAs
Author
Lewis, Jonathan H. ; Pitts, Bobby ; Deshpande, Mandar R. ; El-Zein, Nada
Author_Institution
Motorola Inc., Tempe, AZ, USA
fYear
2000
fDate
2000
Firstpage
143
Lastpage
148
Abstract
We demonstrate, for the first time, functional metamorphic In0.53Ga0.47As/In0.52Al0.48 As tunnel diodes on GaAs(100). Two types of tunnel diodes are presented. Type-A tunnel diodes show a peak current density of 50,000 A/cm2, a peak to valley current ratio of 10 and a fmax of 2.5 GHz. Type-B tunnel diode shows a peak current density of 9,000 A/cm2, and PVCR of 25. AFM images of the as grown tunnel diodes show a surface RMS roughness of approximately 35 Å. TEM micrographs and X-ray diffraction of In0.53Ga0.47 As/In0.52Al0.48As metamorphic test structures indicate smooth abrupt interfaces that are comparable to lattice matched structures
Keywords
III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; interface structure; semiconductor device measurement; surface topography; transmission electron microscopy; tunnel diodes; 2.5 GHz; GaAs; GaAs(100); In0.53Ga0.47As-In0.52Al0.48 As; TEM micrographs; X-ray diffraction; abrupt interfaces; functional metamorphic In0.53Ga0.47As/In 0.52Al0.48As tunnel diodes; lattice matched structures; metamorphic In0.53Ga0.47As/In0.52Al0.48 As tunnel diodes; peak current density; peak to valley current ratio; surface RMS roughness; tunnel diodes; type-A tunnel diodes; type-B tunnel diode; Gallium arsenide; HEMTs; Heterojunctions; Indium phosphide; Lattices; MODFETs; Rough surfaces; Semiconductor diodes; Surface roughness; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductors, 2000 IEEE International Symposium on
Conference_Location
Monterey, CA
Print_ISBN
0-7803-6258-6
Type
conf
DOI
10.1109/ISCS.2000.947144
Filename
947144
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