InAs quantum dot selective area epitaxy using InGaAs thin films

A novel method of quantum dot selective area epitaxy of InAs quantum dots using an InGaAs pattern is presented. Indium segregation from an underlying InGaAs layer allows for preferential growth of InAs quantum dots on InGaAs when additional material is deposited. By using standard lithography techniques, selective area epitaxy was achieved on 20% InGaAs layers with a dot density of 3×10¹⁰ cm^-2 without the need for subsequent regrowth steps. The selective area quantum dot epitaxy was also observed to occur on self-organized 100 nm InAs 2D mesas with a high local selective area quantum dot density of 3.1×10¹² cm^-2