Title :
A proper lifetime-prediction method of PMOSFET with 1.1 nm gate dielectrics in the lower testing voltage region
Author :
Tamura, Naoyoshi ; Kase, Masataka
Author_Institution :
Process Dev. Dept., Fujitsu Ltd., Tokyo, Japan
fDate :
30 March-4 April 2003
Abstract :
A prediction method of time dependent dielectric breakdown (TDDB) lifetime on P-type metal-oxide-semiconductor field effect transistors (PMOSFETs) with 1.1 nm gate dielectrics is studied. Prediction of a voltage dependence of TDDB lifetime was newly proposed using a defect generation probability (PG), which incorporates both scattering rate of hole and valence band electrons. It is found that the lifetime predicted with PG is about ten times longer than that with only high testing voltage. This is the reason why both the channel hole and valence band tunneling electron (VBE) influence this probability, especially VBE is rapidly decreased with a low testing voltage below -1.5 V. Our model based on the newly proposed PG enables us to estimate the proper TDDB lifetime of PMOSFETs, and predicts a power-law voltage dependence on inversion mode.
Keywords :
MOSFET; dielectric thin films; life testing; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; semiconductor device testing; tunnelling; -1.5 V; 1.1 nm; 1.1 nm gate dielectrics; PMOSFET; TDDB lifetime; defect generation probability; hole scattering rate; inversion mode; lifetime-prediction method; lower testing voltage region; power-law voltage; threshold voltage correction method; time dependent dielectric breakdown; valence band electron scattering rate; valence band tunneling electron; voltage dependence; Charge carrier processes; Dielectric breakdown; FETs; Life testing; Low voltage; MOSFET circuits; Prediction methods; Predictive models; Scattering; Tunneling;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International
Print_ISBN :
0-7803-7649-8
DOI :
10.1109/RELPHY.2003.1197814