The Influence of the Wetting Layer Morphology on the Nucleation and the Evolution of InAs/GaAs (001) Quantum Dots

Author

Bute, O. ; Cimpoca, Gh V. ; Placidi, E. ; Arciprete, F. ; Patella, F. ; Fanfoni, M. ; Balzarotti, A.

Author_Institution

Dept. of Phys., Valahia Univ. of Targoviste, Targoviste

Volume

2

fYear

2007

fDate

Oct. 15 2007-Sept. 17 2007

Firstpage

337

Lastpage

340

Abstract

We present an impression of the present state of knowledge on the formation, via a modified Stransky-Krastanov growth mode, of InAs quantum dots (QD) on GaAs substrates. In order to fulfil this requirement, we have grown by MBE a single sample with gradient coverage and its analyses being performed by means of atomic force microscopy.

Keywords

III-V semiconductors; atomic force microscopy; gallium arsenide; indium compounds; molecular beam epitaxial growth; nucleation; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; surface morphology; wetting; InAs-GaAs; InAs-GaAs (001) quantum dots; MBE growth; atomic force microscopy; modified Stransky-Krastanov growth mode; nucleation; wetting layer morphology; Alloying; Atomic force microscopy; Atomic layer deposition; Capacitive sensors; Diffraction; Gallium arsenide; Molecular beam epitaxial growth; Quantum dots; Substrates; Surface morphology; Nanomaterials; Quantum Dots; Self assembling;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2007. CAS 2007. International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4244-0847-4

Type

conf

DOI

10.1109/SMICND.2007.4519729

Filename

4519729