Title :
Experiment and numerical simulation of total dose effects in the substrate PNP transistors
Author :
Ting Zhang ; Yuan Liu ; Yun-fei En ; Yu-Juan He ; Jian-Bo Liu ; Jin-Li Cheng ; Bin Li
Author_Institution :
Sch. of Electr. & Inf. Eng., South China Univ. of Technol., Guangzhou, China
Abstract :
This paper investigates the total dose effects of substrate PNP transistors through experiments. By considering of oxide trapped positive charges and interface traps, the radiation induced excess base current in the irradiated SPNP is simulated. The simulation results showed similar trends with the experimental results, thus the mechanisms of total dose effects in the SPNP transistors are verified.
Keywords :
radiation effects; transistors; interface traps; oxide trapped positive charges; radiation induced excess base current; substrate PNP transistors; total dose effects; Degradation; Electron traps; Junctions; Radiation effects; Radiative recombination; Transistors; SPNP transistor; interface trap; numerical simulation; oxide charge; total dose;
Conference_Titel :
Quality, Reliability, Risk, Maintenance, and Safety Engineering (QR2MSE), 2013 International Conference on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4799-1014-4
DOI :
10.1109/QR2MSE.2013.6625741
