Title :
MANPOWER-the start of something good [GaAs power and transmitter MMICs]
Author_Institution :
GEC-Marconi Mater. Technol. Ltd., Towcester, UK
Abstract :
Power devices and MMICs are key components in all modern telecommunication systems. The EC supported MANPOWER project had as its objectives transmitter circuits at frequencies from 900 MHz through to around 30 GHz. These circuits, fabricated in GaAs MESFET, GaAs based pseudomorphic HEMT and HBT technologies, were aimed at the main frequency bands for hand held telephones, VSAT and millimetric telecomms. The main thrust of the work was in the mobile phone area where the high efficiency and low operating voltage capability of the GaAs MESFET offers a number of system advantages in this application. The programme successfully developed 3 V operating transmit MMICs which are now being sold in large numbers to the mobile phone manufacturers. Fourteen different organisations combined their efforts to meet the major objectives of the project
Keywords :
HEMT integrated circuits; III-V semiconductors; MESFET integrated circuits; MMIC power amplifiers; UHF integrated circuits; bipolar MMIC; field effect MMIC; gallium arsenide; heterojunction bipolar transistors; land mobile radio; mobile radio; power amplifiers; power integrated circuits; radio transmitters; research initiatives; 3 V; 900 MHz to 30 GHz; GaAs; GaAs HBT technology; GaAs MESFET technology; GaAs based pseudomorphic HEMT technology; LV operation; MANPOWER project; SHF; UHF ICs; VSAT; hand held telephones; low operating voltage; mobile phone; power devices; transmit MMICs; transmitter circuits; Frequency; Gallium arsenide; Heterojunction bipolar transistors; MESFET circuits; MMICs; Mobile handsets; PHEMTs; Telecommunications; Telephony; Transmitters;
Conference_Titel :
Electronics, Circuits, and Systems, 1996. ICECS '96., Proceedings of the Third IEEE International Conference on
Conference_Location :
Rodos
Print_ISBN :
0-7803-3650-X
DOI :
10.1109/ICECS.1996.582865
