DocumentCode :
3439194
Title :
CIGS solar cells with very thin absorber layers
Author :
Haug, Veronika ; Quintilla, Aina ; Ahlswede, Erik
Author_Institution :
Zentrum fur Sonnenenergie- und Wasserstoff-Forschung (ZSW), Stuttgart, Germany
fYear :
2009
fDate :
7-12 June 2009
Abstract :
An additional carbon layer between Cu(In,Ga)Se2 (CIGS) layer and molybdenum (Mo) back contact can increase the efficiency of solar cells with very thin absorber layers. In this study the so produced solar cells co-evaporated on top of a carbon layer are compared with cells co-evaporated directly on molybdenum. We found that the carbon layer leads to higher maximum current densities and higher maximum open-circuit voltages and thus higher maximum efficiencies (6.0% with carbon layer compared to 5.6% without for 250 nm CIGS thickness).
Keywords :
carbon; copper compounds; current density; evaporation; gallium compounds; indium compounds; molybdenum; solar cells; ternary semiconductors; C-Mo; CIGS solar cells; CuInGaSe2; Mo; additional carbon layer; current densities; molybdenum back contact; open circuit voltages; solar cells co-evaporation; thin absorber layers; Data analysis; Degradation; Energy measurement; Photovoltaic cells; Photovoltaic systems; Power measurement; Silicon; Solar power generation; System testing; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
Type :
conf
DOI :
10.1109/PVSC.2009.5411171
Filename :
5411171
Link To Document :
بازگشت