Title :
Small Slope Micro/Nano-Electronic Switches
Author :
Ionescu, Adrian M. ; Boucart, Kathy ; Moselund, Kirsten E. ; Pott, Vincent ; Tsamados, Dimitrios
Author_Institution :
Lab. of Micro/Nano-Electron. Devices, Ecole Polytech. Fed. de Lausanne, Lausanne
fDate :
Oct. 15 2007-Sept. 17 2007
Abstract :
This paper discusses three categories of small slope electronic switches: the tunnel FET, the IMOS and the NEM-FET, which are expected to bring added value compared to CMOS by presenting an abrupt subthreshold slope, smaller than the physical limit, 60mV/decade, of the solid-state MOS transistor at room temperature. Recent results and future promises are reported.
Keywords :
field effect transistors; impact ionisation; microswitches; nanoelectronics; IMOS; NEM-FET; impact ionization MOS; micro-nano switches; nano- electro-mechanical FET; small slope electronic switches; tunnel FET; Computer architecture; Energy consumption; FETs; High-K gate dielectrics; MOSFETs; Nanoscale devices; Silicon; Switches; Temperature; Tunneling;
Conference_Titel :
Semiconductor Conference, 2007. CAS 2007. International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-0847-4
DOI :
10.1109/SMICND.2007.4519743
