Title :
A new formulation for accurate numerical extraction of interconnect capacitance in ULSI
Author :
Pham, Hoan H. ; Nathan, Arokia
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Abstract :
We present a new formulation for numerical extraction of capacitance in ULSI interconnects, which employs a single-layer potential description to compute the charge density distribution, and hence the coupling capacitance. The single-layer potential description also yields a Fredholm integral equation of the second kind, for which efficient numerical algorithms are available. Here, we consider not only the potential but also the electric flux, offering a direct means of controlling the overall computational accuracy and efficiency. The technique can be employed in other application areas, including micro-electromechanical systems (MEMS)
Keywords :
ULSI; capacitance; electric charge; integral equations; integrated circuit interconnections; integrated circuit modelling; Fredholm integral equation; MEMS; ULSI interconnects; charge density distribution; coupling capacitance; electric flux; interconnect capacitance; numerical extraction; single-layer potential description; Capacitance; Conductors; Coupling circuits; Dielectrics; Distributed computing; Integral equations; Integrated circuit interconnections; Mechanical systems; Sparse matrices; Ultra large scale integration;
Conference_Titel :
Electronics, Circuits and Systems, 1998 IEEE International Conference on
Conference_Location :
Lisboa
Print_ISBN :
0-7803-5008-1
DOI :
10.1109/ICECS.1998.813944