Title :
Investigation of the detection, mixing and frequency multiplication in the planar semiconductor elements based on the high doped GaAs/AlAs superlattices in MM and SBMM wavelength bands
Author :
Paveliev, D.G. ; Koschurinov, Yu.I. ; Ustinov, V.M. ; Zhukov, A.E. ; Kop´ev, P.S.
Author_Institution :
Nizhny Novgorod State Univ., Russia
Abstract :
Wide-miniband-superlattice devices are suitable for generation, detection,mixing and frequency multiplication of microwaves radiation. The devices, operated at room temperature, are based on nonlinear transport properties of the miniband electrons
Keywords :
III-V semiconductors; aluminium compounds; frequency multipliers; gallium arsenide; heavily doped semiconductors; millimetre wave detectors; millimetre wave frequency convertors; millimetre wave generation; millimetre wave mixers; semiconductor superlattices; submillimetre wave detectors; submillimetre wave generation; submillimetre wave mixers; EHF; GaAs-AlAs; GaAs/AlAs superlattices; MM-wave bands; THF; frequency mixing; frequency multiplication; highly doped superlattices; nonlinear transport properties; planar semiconductor elements; room temperature operation; submillimetre-wave bands; superlattice detector; wide miniband superlattice devices; Current density; Detectors; Electrons; Frequency conversion; Gallium arsenide; Microwave devices; Microwave generation; Schottky diodes; Superlattices; Voltage;
Conference_Titel :
Physics and Engineering of Millimeter and Sub-Millimeter Waves, 2001. The Fourth International Kharkov Symposium on
Conference_Location :
Kharkov
Print_ISBN :
0-7803-6473-2
DOI :
10.1109/MSMW.2001.947296
