A high Q RF CMOS differential active inductor

Author

Akbari-Dilmaghani, R. ; Payne, A. ; Toumazou, C.

Author_Institution

Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci., Technol. & Med., London, UK

Volume

3

fYear

1998

fDate

1998

Firstpage

157

Abstract

This paper presents the design of a differential CMOS active inductor for use in applications around 1-1.7 GHz. The architecture is based on a gyrator-C topology, where tuneable compensation techniques are applied to reduce phase error due to additional device parasitics, thus extending the useable frequency range of the inductor closer to the f_t of the technology. The inductance value and quality factor are also independently tuneable, and simulation results using device parameters from the AMS 0.8 μm CMOS process demonstrate operation at 1.5 GHz with a Q of over 300. The implementation of a tuneable bandpass filter using the inductor is also demonstrated

Keywords

CMOS analogue integrated circuits; Q-factor; UHF filters; UHF integrated circuits; active filters; band-pass filters; circuit simulation; circuit tuning; error compensation; gyrators; high-speed integrated circuits; inductors; integrated circuit design; 0.8 mum; 1 to 1.7 GHz; AMS 0.8 μm CMOS process; RF CMOS differential active inductor; design; gyrator-C topology; high Q factor; high-speed communication circuits; inductance value; phase error reduction; quality factor; simulation results; tuneable bandpass filter; tuneable compensation techniques; Active inductors; CMOS technology; Circuit simulation; Costs; Inductance; Parasitic capacitance; Q factor; Radio frequency; Transconductors; Tunable circuits and devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 1998 IEEE International Conference on

Conference_Location

Lisboa

Print_ISBN

0-7803-5008-1

Type

conf

DOI

10.1109/ICECS.1998.813957

Filename

813957