DocumentCode
3439736
Title
Study of microstructure and defects in hydrogenated microcrystalline silicon films
Author
Peng, Wenbo ; Zeng, Xiangbo ; Liu, Shiyong ; Xiao, Haibo ; Kong, Guanglin ; Yu, Yude ; Liao, Xianbo
Author_Institution
Key Lab. of Semicond. Mater. Sci., Chinese Acad. of Sci., Beijing, China
fYear
2009
fDate
7-12 June 2009
Abstract
Microcrystalline silicon films were deposited by very high frequency (VHF) plasma-enhanced chemical vapor deposition (PECVD) with different hydrogen dilution. The microstructure of these films was investigated using Raman spectroscopy and infrared absorption (IR) spectra. The crystalline, amorphous, and grain boundary volume fractions Xc, Xa and Xgb were estimated from Raman measurements. An interface structure factor (Rif) is proposed to characterize the grain boundary volume fractions in IR spectroscopy. The density of states (DOS) of the microcrystalline crystalline silicon films were studied by phase-shift analysis of modulated photocurrent (MPC) and photoconductivity spectroscopy. It was observed that DOS increases with increasing grain boundary volume fractions, while the values of electron mobility-lifetime product ¿eTe decease.
Keywords
Raman spectra; carrier lifetime; electron mobility; elemental semiconductors; grain boundaries; hydrogen; infrared spectra; interface structure; photoconductivity; semiconductor thin films; silicon; IR spectroscopy; Raman spectroscopy; Si:H; density of states; electron mobility-lifetime product; grain boundary; hydrogenated microcrystalline silicon films; infrared absorption spectra; interface structure factor; microstructure; modulated photocurrent; phase-shift analysis; photoconductivity spectroscopy; plasma-enhanced chemical vapor deposition; volume fractions; Crystallization; Frequency; Grain boundaries; Infrared spectra; Microstructure; Photoconductivity; Plasma chemistry; Semiconductor films; Silicon; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location
Philadelphia, PA
ISSN
0160-8371
Print_ISBN
978-1-4244-2949-3
Electronic_ISBN
0160-8371
Type
conf
DOI
10.1109/PVSC.2009.5411197
Filename
5411197
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