Analysis of strain compensated GaAs-based InAs QD solar cells

Author

Cress, Cory D. ; Hubbard, Seth M. ; Maximenko, Serguei I. ; Bailey, Chris G. ; Forbes, David V. ; Raffaelle, Ryne P. ; Twigg, Mark E. ; Walters, Robert J.

Author_Institution

Electron. Sci. & Technol. Div., U.S. Naval Res. Lab., Washington, DC, USA

fYear

2009

fDate

7-12 June 2009

Abstract

A suite of characterization techniques including electron beam induced current and cross-sectional transmission electron microscopy in cooperation with current voltage and external quantum efficiency solar measurements are used to analyze the effects of incorporating strain-compensating layers in GaAs-based InAs quantum dot solar cells. The data indicate that strain compensation layers can reduce defect densities and increase device performance.

Keywords

EBIC; III-V semiconductors; compensation; gallium arsenide; indium compounds; semiconductor quantum dots; solar cells; transmission electron microscopy; GaAs; InAs; cross sectional transmission electron microscopy; current voltage; electron beam induced current; external quantum efficiency; quantum dot solar cells; strain compensation; Capacitive sensors; Current measurement; Electron beams; Gallium arsenide; Laboratories; Photovoltaic cells; Quantum dots; Scanning electron microscopy; Tensile stress; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE

Conference_Location

Philadelphia, PA

ISSN

0160-8371

Print_ISBN

978-1-4244-2949-3

Electronic_ISBN

0160-8371

Type

conf

DOI

10.1109/PVSC.2009.5411224

Filename

5411224