• DocumentCode
    3440367
  • Title

    CdTe cell stability vs. CdS thickness

  • Author

    Paudel, N.R. ; Plotnikov, V.V. ; McClellan, C. ; Wieland, K.A. ; Liu, X. ; Compaan, A.D.

  • Author_Institution
    Dept. of Phys. & Astron., Univ. of Toledo, Toledo, OH, USA
  • fYear
    2009
  • fDate
    7-12 June 2009
  • Abstract
    We have studied the stability in air of sputtered CdTe/CdS cells with a focus on the thickness of the CdS layer and the substrate used during cell fabrication. The stability of cell efficiencies under light soak is compared for CdTe cells on both HRT-coated Pilkington TEC 15 glass and standard TEC15 glass for a range of seven different CdS layer thicknesses from 0 to 230 nm. Little difference in stability can be found between cells with or without the HRT layer for all CdS thicknesses. The buffer layer helps to produce high initial performance and uniformity of cells by maintaining high VOC for very thin CdS layers. But there is no indication that the buffer layer improves the stability of unencapsulated, sputtered cells under one-sun light soak at open circuit. Devices with the thicker CdS layers show better stability under one-sun light soak in air.
  • Keywords
    II-VI semiconductors; buffer layers; cadmium compounds; glass; sputtered coatings; substrates; wide band gap semiconductors; CdS thickness; CdTe cell stability; CdTe-CdS; HRT coated Pilkington TEC 15 glass; buffer layer; cell fabrication; light soak; open circuit; sputtered cells; substrate; Astronomy; Buffer layers; Circuit stability; Fabrication; Glass; Photovoltaic cells; Physics; Substrates; Thickness measurement; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
  • Conference_Location
    Philadelphia, PA
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-2949-3
  • Electronic_ISBN
    0160-8371
  • Type

    conf

  • DOI
    10.1109/PVSC.2009.5411227
  • Filename
    5411227