DocumentCode
3440367
Title
CdTe cell stability vs. CdS thickness
Author
Paudel, N.R. ; Plotnikov, V.V. ; McClellan, C. ; Wieland, K.A. ; Liu, X. ; Compaan, A.D.
Author_Institution
Dept. of Phys. & Astron., Univ. of Toledo, Toledo, OH, USA
fYear
2009
fDate
7-12 June 2009
Abstract
We have studied the stability in air of sputtered CdTe/CdS cells with a focus on the thickness of the CdS layer and the substrate used during cell fabrication. The stability of cell efficiencies under light soak is compared for CdTe cells on both HRT-coated Pilkington TEC 15 glass and standard TEC15 glass for a range of seven different CdS layer thicknesses from 0 to 230 nm. Little difference in stability can be found between cells with or without the HRT layer for all CdS thicknesses. The buffer layer helps to produce high initial performance and uniformity of cells by maintaining high VOC for very thin CdS layers. But there is no indication that the buffer layer improves the stability of unencapsulated, sputtered cells under one-sun light soak at open circuit. Devices with the thicker CdS layers show better stability under one-sun light soak in air.
Keywords
II-VI semiconductors; buffer layers; cadmium compounds; glass; sputtered coatings; substrates; wide band gap semiconductors; CdS thickness; CdTe cell stability; CdTe-CdS; HRT coated Pilkington TEC 15 glass; buffer layer; cell fabrication; light soak; open circuit; sputtered cells; substrate; Astronomy; Buffer layers; Circuit stability; Fabrication; Glass; Photovoltaic cells; Physics; Substrates; Thickness measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location
Philadelphia, PA
ISSN
0160-8371
Print_ISBN
978-1-4244-2949-3
Electronic_ISBN
0160-8371
Type
conf
DOI
10.1109/PVSC.2009.5411227
Filename
5411227
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