Advanced MOSFETs using HfTaON/SiO/sub 2/ gate dielectric and TaN metal gate with excellent performances for low standby power application

Author

Yu, Xiongfei ; Zhu, Chunxiang ; Yu, Mingbin ; Li, M.F. ; Chin, Albert ; Tung, C.H. ; Gui, D. ; Kwong, Dim-Lee

Author_Institution

Dept. of ECE, Singapore Nat. Univ.

fYear

2005

fDate

5-5 Dec. 2005

Firstpage

27

Lastpage

30

Abstract

In this work, a novel HfTaON/SiO₂ gate dielectric with metal gate has been investigated for low standby power CMOS application. This gate stack exhibits excellent electrical performances, including low leakage current relative to Hf-silicates, good thermal stability, very low interface state density, superior electron and hole mobilities (100% and 96% of universal curves at 0.8 MV/cm), and excellent BTI characteristic. Therefore, the HfTaON/SiO₂ has a potential to replace current SiO₂ and SiON as the gate dielectric for advanced low standby power application

Keywords

MOSFET; dielectric thin films; electron mobility; hafnium compounds; hole mobility; silicon compounds; tantalum compounds; thermal stability; BTI characteristic; HfTaON-SiO₂; MOSFET device; TaN; electron mobility; gate dielectrics; hole mobility; low interface state density; low leakage current; low standby power CMOS application; metal gate; thermal stability; Annealing; Buffer layers; Degradation; Dielectric materials; Dielectric substrates; Dry etching; Hafnium; Leakage current; MOSFETs; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609257

Filename

1609257