Title :
A Simple Low-Noise Subharmonically Injection-Locked Oscillator for Low-Cost RF Synthesizers and Front-Ends for Wireless Communications
Author :
Tarar, M.A. ; Zhizhang Chen
Author_Institution :
Dept. of Electr. & Comput. Eng., Dalhousie Univ., Halifax, NS
Abstract :
In this paper, a simple 2.095 GHz subharmonically injection-locked oscillator (ILO) using HBT transistor is presented. A subharmonic signal of 1.0475 GHz frequency is injected to the oscillator to lock the oscillation at 2.095 GHz. With the capacitive feedback impedance at the transistor emitter, and inductive load and the resonator at the transistor base, a low phase noise of -92 dBc/Hz at the WKHz offset was obtained. Simulation results show that the phase noise of the oscillation output is only about 0.5 dB higher than that of the injected signal. Such a low noise feature has presented potentials in developing RF synthesizer and front-ends for low-cost wireless and mobile communication transceivers.
Keywords :
UHF bipolar transistors; UHF oscillators; frequency synthesizers; heterojunction bipolar transistors; injection locked oscillators; mobile radio; transceivers; HBT transistor; capacitive feedback impedance; frequency 1.0475 GHz; frequency 2.095 GHz; front-ends; inductive load; low-cost RF synthesizers; low-noise subharmonically injection-locked oscillator; mobile communication transceivers; transistor emitter; wireless communications; Feedback; Heterojunction bipolar transistors; Impedance; Injection-locked oscillators; Mobile communication; Phase noise; Radio frequency; Synthesizers; Transceivers; Wireless communication; Injection locked oscillators; low phase noise; simple frequency synthesizers; wireless communication transceivers;
Conference_Titel :
Communication Networks and Services Research Conference, 2008. CNSR 2008. 6th Annual
Conference_Location :
Halifax, NS
Print_ISBN :
978-0-7695-3135-9
DOI :
10.1109/CNSR.2008.25