Title :
New findings on inversion-layer mobility in highly doped channel Si MOSFETs
Author :
Nakabayashi, Yukio ; Ishihara, Takamitsu ; Koga, Junji ; Takayanagi, Mariko ; Takagi, Shin-ichi
Author_Institution :
Adv. LSI Technol. Lab., Toshiba Corp., Yokohama
Abstract :
Inversion-layer mobility in highly doped channel Si MOSFETs was investigated. It was found, for the first time, substrate Coulomb scattering (musub) has anomalous surface carrier density (N S) dependence when acceptor concentration (NA) becomes larger than 2times1018 cm-3. The mu sub behavior can be explained by the suppression of the screening effect. In addition, interface Coulomb scattering (muit ) has stronger NS dependence than ever reported. The muit behavior can be explained in terms of the relative distance between the surface carriers and interface states. Influence of high channel doping on MOS interface barrier height was also studied
Keywords :
MOSFET; carrier density; inversion layers; semiconductor doping; silicon; MOS interface barrier height; MOSFET; Si; acceptor concentration; high channel doping; interface Coulomb scattering; inversion-layer mobility; substrate Coulomb scattering; surface carrier density; Charge carrier density; Doping; Frequency measurement; Impurities; Interface states; Large scale integration; MOSFETs; Research and development; Scattering; Substrates;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609287
