20nm gate bulk-finFET SONOS flash

Author

Hwang, Jiunn-Ren ; Lee, Tsung-Lin ; Ma, Huan-Chi ; Lee, Tzyh-Cheang ; Chung, Tang-Hsuan ; Chang, Chang-Yun ; Liu, Sheng-Da ; Perng, Baw-Ching ; Hsu, Ju-Wang ; Lee, Ming-Yong ; Ting, Chih-Yuan ; Huang, Chien-Chao ; Wang, Ji-Hua ; Shieh, Jyu-Horng ; Yang, F

Author_Institution

Taiwan Semicond. Manuf. Co., Hsinchu

fYear

2005

fDate

5-5 Dec. 2005

Firstpage

154

Lastpage

157

Abstract

High-performance FinFET SONOS (silicon-oxide-nitride-oxide-silicon) flash cells with gate length down to 20nm have been fabricated and operated successfully on bulk-silicon substrate for the first time. A program/erase window of 2V has been achieved with high P/E speed (T_P equiv 10mus and TE equiv 1ms), and a 1.5V window remained after 10 years at room temperature. Multi-level storage is also obtained with DeltaV_t > 4V and T_P,E equiv 1 ms. Operation voltages are not more than 7V in the two applications. Gate disturb issues are alleviated by applying an appropriate bias on unselected bit lines

Keywords

MOSFET; nitrogen compounds; oxygen compounds; silicon compounds; 1.5 V; 2 V; 20 nm; SONOS; bulk silicon substrate; flash cells; gate bulk-FinFET; gate disturb; multilevel storage; program/erase window; silicon-oxide-nitride-oxide-silicon; Cities and towns; Costs; Fabrication; FinFETs; Flash memory; Implants; Nonvolatile memory; SONOS devices; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609293

Filename

1609293