Waveguide collapse In InGaAsP ridge-waveguide lasers with weak lateral optical confinement

Author

Komissarov, A. ; Maiorov, M. ; Menna, R. ; Todorov, Stan ; Connolly, James ; Garbuzov, D. ; Khalfin, V. ; Tsekoun, Alexei

Author_Institution

Princeton Lightwave Inc., Cranbury, NJ, USA

fYear

2001

fDate

11-11 May 2001

Firstpage

31

Lastpage

32

Abstract

Summary form only given. The maximum CW powers for single-mode diode lasers are limited by tolerable current and photon densities in their active regions. The maximum width of a single-mode laser active region is inversely proportional to /spl radic//spl Delta/n/sub B/, where /spl Delta/n/sub B/ is the built-in refractive index step at the active region boundary. In this paper, /spl lambda/=1.5 /spl mu/m InGaAsP/InP SCH 3QW broad-waveguide (600 nm) ridge waveguide lasers with low values of /spl Delta/n/sub B/ (5 - 7/spl times/10/sup -3/) have been investigated.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser modes; laser transitions; quantum well lasers; ridge waveguides; waveguide lasers; 1.5 micron; 600 nm; InGaAsP ridge waveguide lasers; InGaAsP-InP; InGaAsP/InP SCH 3QW broad-waveguide ridge waveguide lasers; active region boundary; active regions; built-in refractive index step; inversely proportional; maximum CW powers; photon densities; single-mode diode lasers; single-mode laser active region; tolerable current; waveguide collapse; weak lateral optical confinement; Laser mode locking; Optical refraction; Optical waveguides; Optimized production technology; Pulse amplifiers; Pulse shaping methods; Refractive index; Semiconductor lasers; Ultrafast optics; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-662-1

Type

conf

DOI

10.1109/CLEO.2001.947424

Filename

947424