Characterization of GaAsSb/GaAs quantum wells for 1.3 /spl mu/m VCSELs

Author

Dinu, M. ; Cunningham, J.E. ; Quochi, F. ; Shah, J.

Author_Institution

Lucent Technol. Bell Labs, Holmdel, NJ, USA

fYear

2001

fDate

11-11 May 2001

Firstpage

35

Lastpage

36

Abstract

Summary form only given. GaAsSb/GaAs quantum wells grown on GaAs substrates are a potential active material for the monolithic growth of 1.3 /spl mu/m VCSELs. In this material system we determine a type II band alignment, with a small conduction band offset /spl Delta/E/sub c/ = 100 meV. We measure material gain coefficients comparable to those of type I InGaAs quantum wells, although under flat band conditions the electrons and holes are spatially separated.

Keywords

III-V semiconductors; X-ray diffraction; gallium arsenide; gallium compounds; infrared spectra; laser transitions; molecular beam epitaxial growth; photoluminescence; quantum well lasers; semiconductor quantum wells; surface emitting lasers; time resolved spectra; 1.3 micron; 100 meV; GaAs substrates; GaAsSb-GaAs; GaAsSb/GaAs quantum wells; VCSELs; active material; high resolution X-ray diffraction; material gain coefficients; monolithic growth; small conduction band offset; time-resolved photoluminescence; type II band alignment; Carbon nanotubes; Conducting materials; Conductivity; Current density; Gallium arsenide; Indium tin oxide; Photoluminescence; Polymers; Powders; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-662-1

Type

conf

DOI

10.1109/CLEO.2001.947430

Filename

947430