Title :
High frequency power LDMOS technologies for base station applications status, potential, and benchmarking
Author :
Ma, Gordon ; Chen, Qiang ; Tornblad, Olof ; Wei, Tao ; Ahrens, Carsten ; Gerlach, Rolf
Author_Institution :
RF Power Products, Infineon Technol., Tempe, AZ
Abstract :
LDMOS technologies based in G. Ma et al. (1996) and H. Brech et al. (2003) have been in dominate position in wireless base station applications for frequencies ranging from 450MHz to 2.7GHz for the last 10 years due to performance, cost, reliability, and power capability advantages. This paper reviews the leading edge LDMOS development at Infineon and discusses future potential and limitation for LDMOS technologies in general; benchmarking with alternative technologies is also presented
Keywords :
UHF field effect transistors; power MOSFET; radio links; 0.45 to 2.7 GHz; power LDMOS technologies; wireless base station; Base stations; Capacitance; Costs; Flanges; Linearity; Multiaccess communication; Packaging; Peak to average power ratio; Radio frequency; Thermal resistance;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609351
