DocumentCode :
3442733
Title :
Experimental clarification of mobility determining factors in HfSiON CMISFET with various film compositions
Author :
Iijima, Ryosuke ; Takayanagi, Mariko ; Yamaguchi, Takeshi ; Koyama, Masato ; Nishiyama, Akira
Author_Institution :
Corporate Res. & Dev. Center, Toshiba Corp., Yokohama
fYear :
2005
fDate :
5-5 Dec. 2005
Firstpage :
421
Lastpage :
424
Abstract :
Dominant scattering mechanisms for both electrons and holes in HfSiON MISFET were examined systematically by using the newly developed pulse measurement technique. Mobility determining factors for electrons and holes in various effective field (Eeff) regions were identified. In addition, the influence of two elements of Hf and N on the mobility in the operational Eeff region was investigated and guidelines for improving performance of HfSiON-CMOS devices were presented
Keywords :
MISFET; electron mobility; hafnium compounds; hole mobility; CMOS devices; HfSiON; MISFET; electron scattering; film compositions; hole scattering; mobility determining factors; pulse measurement technique; scattering mechanisms; Capacitance-voltage characteristics; Charge carrier processes; Degradation; Dielectrics; Electron mobility; Hafnium; MISFETs; Pulse measurements; Scattering; Semiconductor films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
Type :
conf
DOI :
10.1109/IEDM.2005.1609368
Filename :
1609368
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3442733
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