A study on a novel smoothing method by atomic layer epitaxy for microstructure fabrication

Author

Hirose, S. ; Yoshida, A. ; Yamaura, M. ; Munekata, H.

Author_Institution

Mech. Eng. Lab., MITI, Ibaraki, Japan

Volume

1

fYear

1999

fDate

36342

Firstpage

233

Abstract

We prove that atomic layer epitaxy (ALE) provides a novel technique to smooth a relatively rough GaAs surface. The method has been applied successfully to smooth chemically etched V-grooved GaAs structures and selectively grown GaAs stripe structures The key advantage is that ALE is governed by two-dimensional island growth mode

Keywords

III-V semiconductors; atomic force microscopy; atomic layer epitaxial growth; gallium arsenide; island structure; rough surfaces; semiconductor epitaxial layers; surface topography; surface treatment; AFM; GaAs; atomic layer epitaxy; chemically etched V-grooved structures; film thickness controllability; microstructure fabrication; relatively rough surface; selectively grown stripe structures; self-limiting process; smoothing method; two-dimensional island growth mode; Atomic layer deposition; Epitaxial growth; Epitaxial layers; Etching; Fabrication; Gallium arsenide; Microstructure; Rough surfaces; Smoothing methods; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Intelligent Processing and Manufacturing of Materials, 1999. IPMM '99. Proceedings of the Second International Conference on

Conference_Location

Honolulu, HI

Print_ISBN

0-7803-5489-3

Type

conf

DOI

10.1109/IPMM.1999.792480

Filename

792480