Title :
A new top structure concept for a trench-gate emitter implant Field-Stop IGBT
Author :
Alessandria, A. ; Fragapane, L.
Author_Institution :
STMicroelectronics, Catania, Italy
Abstract :
In recent years, a new device concept has appeared in IGBT technology. It is a structure between a PT and an NPT device, with a low-doped emitter, where the fundamental role is played by the Field-Stop layer. In this paper, we have fixed some considerations about a proper design of the top structure; moreover, a new structure will be proposed to improve the electrical performances of the device.
Keywords :
insulated gate bipolar transistors; semiconductor device models; IGBT; NPT device; field-stop layer; low-doped emitter; trench-gate emitter; Automation; Charge carrier lifetime; Consumer electronics; Electronics industry; Implants; Insulated gate bipolar transistors; Insulation; Power electronics; Switching loss; Voltage; IGBT; devices; simulations; technology;
Conference_Titel :
Power Electronics Electrical Drives Automation and Motion (SPEEDAM), 2010 International Symposium on
Conference_Location :
Pisa
Print_ISBN :
978-1-4244-4986-6
Electronic_ISBN :
978-1-4244-7919-1
DOI :
10.1109/SPEEDAM.2010.5542150
