• DocumentCode
    3443293
  • Title

    III–V multijunction solar cells for ultra-high concentration photovoltaics

  • Author

    Algora, Carlos ; Rey-Stolle, Ignacio ; García, Iván ; Galiana, Beatriz ; Baudrit, Mathieu ; Espinet, Pilar ; Barrigón, Enrique ; González, José Ramón

  • Author_Institution
    Inst. de Energia Solar, Univ. Politec. de Madrid, Madrid, Spain
  • fYear
    2009
  • fDate
    7-12 June 2009
  • Abstract
    In this paper, the benefits of the ultra high concentration (¿ 1000 suns) are shown in terms of cost reduction and efficiency increase. Accordingly, the strategy followed at IES-UPM for more than 15 years is the development of III-V solar cells suitable for operation at 1000 suns or more. Recently, we have developed and manufactured a GaInP/GaAs dual-junction cell which results in an efficiency (measured at the Calibration Laboratory, CalLab, of Fraunhofer Institute in Freiburg) of 32.6% for a concentration range going from 499 to 1026 suns. This efficiency is the world record efficiency for a dual-junction solar cell. Besides, the efficiency is still as high as 31% at 3000 suns. The theoretical optimization of this solar cell (based on an accurate modelling) shows a potential efficiency over 36% at 1000 suns. We have extended this strategy to lattice-matched GaInP/Ga(In)As/Ge triple junction solar cells. First manufactured cells exhibit an efficiency of 31.5% at 1000 suns. The theoretical optimization of this cells show that an efficiency over 43% at 1000 suns is achievable. A roadmap has been established in order to reach this value.
  • Keywords
    III-V semiconductors; elemental semiconductors; gallium arsenide; gallium compounds; germanium; indium compounds; semiconductor device manufacture; semiconductor heterojunctions; solar cells; GaInP-GaAs; GaInP-GaInAs-Ge; III-V multijunction solar cells; dual-junction solar cell; lattice-matched triple junction solar cells; optimization; potential efficiency; ultra-high concentration photovoltaics; Cost function; Gain measurement; Gallium arsenide; III-V semiconductor materials; Manufacturing; Photovoltaic cells; Production; Silicon; Sun; Telecommunication standards;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
  • Conference_Location
    Philadelphia, PA
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-2949-3
  • Electronic_ISBN
    0160-8371
  • Type

    conf

  • DOI
    10.1109/PVSC.2009.5411372
  • Filename
    5411372