Title :
Multi-subband monte carlo modeling of nano-mosfets with strong vertical quantization and electron gas degeneration
Author :
Lucci, L. ; Palestri, P. ; Esseni, D. ; Selmi, L.
Author_Institution :
DIEGM, Udine Univ.
Abstract :
This paper presents a new self-consistent MC simulator for the 2D electron gas of nano-MOSFETs. The simulator is two-dimensional in real space and in k-space, and accounts for the electron gas degeneracy in the k-plane. Simulations of thin-film SOI MOSFETs show that the subband structure and the carrier degeneracy strongly affect the transport properties particularly the injection velocity. Our results also point-out the strong anisotropy of the occupation function, which seriously hampers the use of simulators based on the momentum of the BTE
Keywords :
Boltzmann equation; MOSFET; Monte Carlo methods; semiconductor device models; silicon-on-insulator; thin film transistors; two-dimensional electron gas; 2D electron gas; BTE momentum; Boltzmann transport equation; carrier degeneracy; electron gas degeneration; injection velocity; k-space; multisubband Monte Carlo modeling; nanoMOSFET; real space; self-consistent MC simulator; strong anisotropy; subband structure; thin-film SOI MOSFET; transport properties; vertical quantization; Acoustic scattering; Crystalline materials; Electrons; Flowcharts; MOSFETs; Monte Carlo methods; Optical scattering; Particle scattering; Poisson equations; Quantization;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609425
