Physical mechanism of work function modulation due to impurity pileup at Ni-FUSI/SiO(N) interface

Author

Tsuchiya, Yoshinori ; Yoshiki, Masahiko ; Koyama, Masato ; Kinoshita, Atsuhiro ; Koga, Junji

Author_Institution

Corporate R&D Center, Toshiba Corp., Yokohama

fYear

2005

fDate

5-5 Dec. 2005

Lastpage

625

Abstract

The physical mechanism of work function modulation caused by impurity pileup at Ni-FUSI/SiO(N) interface were investigated. We proposed and verified a new model which can explain the Phi_m-eff modulation both nMOS (As P and Sb) and pMOS (B). In our model, the position and concentration of impurity at interface determine the direction and the extent of Phi_m-eff modulation. We have also developed a new method to introduce impurity atoms at the interface after FUSI gate formation, in which the amount of Phi_m-eff modulation is higher than that for the conventional process

Keywords

MIS structures; doping profiles; nickel compounds; semiconductor doping; silicon compounds; work function; FUSI gate formation; Ni-SiO(N); impurity atoms; impurity pileup; interface impurity concentration; interface impurity position; nMOS; pMOS; physical mechanism; work function modulation; Doping; Electrodes; Fabrication; Impurities; Laboratories; Large scale integration; MOS devices; Phase modulation; Research and development; Silicides;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609427

Filename

1609427