Title :
Improved light-trapping effect in a-Si:H / μC-Si:H tandem solar cells by using high haze SnO2:F thin films
Author :
Kambe, Mika ; Matsui, Takuya ; Sai, Hitoshi ; Taneda, Naoki ; Masum, Kunio ; Takahashi, Akira ; Ikeda, Takashi ; Oyama, Takuji ; Kondo, Michio ; Sato, Kazuo
Author_Institution :
Asahi Glass Co., Ltd., Yokohama, Japan
Abstract :
In this paper we report on the fabrication of amorphous silicon (a-Si:H)/microcrystalline silicon (μc-Si:H) p-i-n tandem solar cells on high haze fluorine-doped tin oxide (SnO2:F) transparent conductive oxide (TCO) thin films, type-HU. The HU-TCO has double texture morphology on its surface and shows high haze value through the whole optical region where the tandem solar cells are sensitive. We demonstrate here that light-trapping effect is improved by using HU-TCO. HU-TCO provided higher short-circuit current than conventional pyramidal TCO when i-layer thicknesses of a-Si:H and μc- Si:H of tandem solar cell were 0.35 and 1.5 μm, respectively. Quantum efficiency of bottom ??c-Si:H cell was improved by 1 mA/cm2 by using HU-TCO.
Keywords :
elemental semiconductors; fluorine; hydrogen; radiation pressure; silicon; solar cells; thin films; tin compounds; Si:H-Si:H; SnO2:F; a-Si:H-μC-Si:H tandem solar cells; amorphous silicon; double texture morphology; high haze fluorine-doped tin oxide transparent conductive oxide thin films; light-trapping effect; microcrystalline silicon; optical region; p-i-n tandem solar cells; quantum efficiency; short-circuit current; size 0.35 μm to 1.5 μm;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
DOI :
10.1109/PVSC.2009.5411411
