DocumentCode
3444167
Title
Successful transferring of active transistors, rf-passive components and high density interconnect from bulk si to organic substrates
Author
Guo, L.H. ; Zhang, Q.X. ; Li, H.Y. ; Liao, E.B. ; Bera, L.K. ; Loh, W.Y. ; Kuo, C.C. ; Lo, G.Q. ; Balasubramanian, N. ; Kwong, D.L.
Author_Institution
Inst. of Microelectron., Singapore
fYear
2005
fDate
5-5 Dec. 2005
Firstpage
675
Lastpage
678
Abstract
A thermal bonding based wafer-transfer-technology (WTT) has been developed and successfully applied to transfer active devices, RF-passive components and high density interconnect pre-fabricated by CMOS technology onto a flexible organic substrate. The intrinsic performances of transistors and interconnect are preserved with excellent reliability, and the RF-passive components are clearly demonstrated in much enhanced RF characteristics
Keywords
MOSFET; flexible electronics; interconnections; reliability; wafer bonding; CMOS technology; RF-passive components; Si; active transistors; bulk silicon; high density interconnect; organic substrate; thermal bonding; wafer-transfer-technology; CMOS technology; Costs; Glass; Insulation; MOSFETs; Radio frequency; Radiofrequency integrated circuits; Substrates; Thin film inductors; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location
Washington, DC
Print_ISBN
0-7803-9268-X
Type
conf
DOI
10.1109/IEDM.2005.1609441
Filename
1609441
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