• DocumentCode
    3444167
  • Title

    Successful transferring of active transistors, rf-passive components and high density interconnect from bulk si to organic substrates

  • Author

    Guo, L.H. ; Zhang, Q.X. ; Li, H.Y. ; Liao, E.B. ; Bera, L.K. ; Loh, W.Y. ; Kuo, C.C. ; Lo, G.Q. ; Balasubramanian, N. ; Kwong, D.L.

  • Author_Institution
    Inst. of Microelectron., Singapore
  • fYear
    2005
  • fDate
    5-5 Dec. 2005
  • Firstpage
    675
  • Lastpage
    678
  • Abstract
    A thermal bonding based wafer-transfer-technology (WTT) has been developed and successfully applied to transfer active devices, RF-passive components and high density interconnect pre-fabricated by CMOS technology onto a flexible organic substrate. The intrinsic performances of transistors and interconnect are preserved with excellent reliability, and the RF-passive components are clearly demonstrated in much enhanced RF characteristics
  • Keywords
    MOSFET; flexible electronics; interconnections; reliability; wafer bonding; CMOS technology; RF-passive components; Si; active transistors; bulk silicon; high density interconnect; organic substrate; thermal bonding; wafer-transfer-technology; CMOS technology; Costs; Glass; Insulation; MOSFETs; Radio frequency; Radiofrequency integrated circuits; Substrates; Thin film inductors; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    0-7803-9268-X
  • Type

    conf

  • DOI
    10.1109/IEDM.2005.1609441
  • Filename
    1609441