Title :
On the dispersive versus arrhenius temperature activation of nbti time evolution in plasma nitrided gate oxides: measurements, theory, and implications
Author :
Varghese, D. ; Saha, D. ; Mahapatra, S. ; Ahmed, K. ; Nouri, F. ; Alam, M.
Author_Institution :
Dept. of Electr. Eng., IIT Bombay, Mumbai
Abstract :
Negative bias temperature instability (NBTI) is studied in p-MOSFETs having decoupled plasma nitrided (DPN) gate oxides (EOT range of 12 Aring through 22Aring). Threshold voltage shift (DeltaVT) is shown to be primarily due to interface trap generation (DeltaNIT) and significant hole trapping (DeltaNOT) has not been observed. DeltaVT follows power-law time (t) dependence and Arrhenius temperature (T) activation
Keywords :
MOSFET; hole traps; interface states; semiconductor device reliability; thermal stability; Arrhenius temperature activation; DPN; NBTI; decoupled plasma nitrided; gate oxides; hole trapping; interface trap generation; negative bias temperature instability; p-MOSFET; time evolution; Dispersion; MOSFET circuits; Negative bias temperature instability; Niobium compounds; Plasma measurements; Plasma temperature; Temperature dependence; Threshold voltage; Time measurement; Titanium compounds;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609444
