Title :
Non-uniform degradation behavior across device width in RF power GaAs PHEMTs
Author :
Villanueva, A.A. ; del Alamo, J.A. ; Hisaka, T. ; Hayashi, K. ; Somerville, M.
Author_Institution :
Massachusetts Inst. of Technol., Cambridge, MA
Abstract :
We have studied the electrical degradation of RF power PHEMTs by means of light-emission measurements performed during bias-stress experiments. We show that electrical degradation can proceed in a highly non-uniform manner across the width of the device. We identify the origin of this as a small systematic non-uniformity in the recess geometry that impacts the electric field and the impact ionization rate on the drain of the device. Our research suggests that a close examination of the width distribution of electric field in RF power PHEMTs (and FETs in general) is essential to enhance their long-term reliability
Keywords :
III-V semiconductors; gallium arsenide; impact ionisation; power HEMT; semiconductor device measurement; semiconductor device reliability; GaAs; RF power PHEMT; bias-stress experiments; electric field; electrical degradation; impact ionization rate; light-emission measurements; nonuniform degradation behavior; recess geometry; Degradation; Electric variables measurement; Gallium arsenide; Geometry; Nonuniform electric fields; PHEMTs; Performance evaluation; Power measurement; Radio frequency; Radiofrequency identification;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609471
