Title :
A high-performance and low-noise CMOS image sensor with an expanding photodiode under the isolation oxide
Author :
Itonaga, Kazuichiroh ; Abe, Hideshi ; Yoshihara, Ikuo ; Hirayama, Teruo
Author_Institution :
Dept. of Imager Process, Sony Corp., Kanagawa
Abstract :
We´ve realized a 2.5-mum square pixel with high saturation electron capacity and sensitivity, which realizes the low dark current as well as triple Qs value of the conventional STI, by expanding the buried photodiode under the isolation oxide, and the sensitivity gain will be 20% higher using the Cu process than is possible with the Al process
Keywords :
CMOS image sensors; photodiodes; 2.5 micron; CMOS image sensor; dark current; electron capacity; electron sensitivity; isolation oxide; photodiode; Boron; CMOS image sensors; CMOS technology; Electrons; Ion implantation; Isolation technology; Logic; Photodiodes; Semiconductor films; Space technology;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609474
