DocumentCode :
3444926
Title :
Enhanced Front and Rear dielectric passivation for commercially grown Czochralski silicon for high efficiency solar cells
Author :
Upadhyaya, A. ; Yelundur, V. ; Ramanathan, S. ; Lai, J.-H. ; Upadhyaya, V. ; Rohatgi, A. ; Koehler, L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2009
fDate :
7-12 June 2009
Abstract :
Commercial silicon solar cell efficiencies have been improving consistently over the last few years with the implementation of novel techniques. Along with larger wafer area and thinner substrates, low-cost processing of high efficiency solar cells can help achieve grid parity using crystalline silicon. In this work, large area cells were fabricated using conventional diffusion, oxidation and screen printing technologies. Several rear passivation schemes were compared to achieve low rear surface recombination velocities and combined with good front passivation to obtain cell VOC of ~650 mV. Cells fabricated using these schemes resulted in an efficiency of 19.7% on 4 cm2 cells and 18.5% on 62 cm2 cells. Analysis and characterization of these cells reveals the possibility of achieving cell efficiencies greater than 19% on large area substrates.
Keywords :
crystal growth from melt; diffusion; elemental semiconductors; oxidation; passivation; semiconductor growth; silicon; solar cells; surface recombination; Si; commercially grown Czochralski silicon; diffusion; front dielectric passivation; grid parity; high efficiency solar cells; oxidation; rear dielectric passivation; screen printing; surface recombination velocities; Coatings; Dielectrics; III-V semiconductor materials; Optical reflection; Optical refraction; Optical surface waves; Passivation; Photovoltaic cells; Silicon; Solar energy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
Type :
conf
DOI :
10.1109/PVSC.2009.5411457
Filename :
5411457
Link To Document :
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