Author :
Verheyen, P. ; Eneman, G. ; Rooyackers, R. ; Loo, R. ; Eeckhout, L. ; Rondas, D. ; Leys, F. ; Snow, J. ; Shamiryan, D. ; Demand, M. ; Hoffman, Th.Y. ; Goodwin, M. ; Fujimoto, H. ; Ravit, C. ; Lee, B.-C. ; Caymax, M. ; De Meyer, K. ; Absil, P. ; Jurczak, M
Abstract :
This paper demonstrates for the first time the integration of an HfO2/TiN/poly gate stack and a recessed SiGe S/D module. It also shows that by combining the SiGe stressor with a compressive nitride contact etch stop layer, it is possible to reach improvements in IDSAT of up to 65%, showing that the various strain mechanisms are additive on advanced gate stacks. This way an IDSAT of 422 muA/mum at 20pA/mum I OFF and VDD = 1.1 V can be obtained when a 25% SiGe S/D module is combined with a 1.5 GPa compressive sCESL layer
Keywords :
Ge-Si alloys; etching; field effect transistors; hafnium compounds; titanium compounds; 1.5 GPa; HfO2-TiN; SiGe; SiGe stressor; compressive nitride contact; compressive sCESL layer; etch stop layer; gate stacks; high performance pFET; inserted metal gate; poly gate stack; recessed SiGe S/D module; strain mechanisms; Annealing; Dielectrics; Electrodes; Etching; Germanium silicon alloys; Hafnium oxide; Implants; Silicidation; Silicon germanium; Tin;
