A 4 Gs/s comparator fabricated in an AlGaAs/GaAs heterojunction bipolar process

Author

Cepl, F. ; Baureis, P. ; Seitzer, D. ; Zwicknagl, P.

Author_Institution

Fraunhofer-Inst. for Integrated Circuits, Erlangen, Germany

fYear

1991

fDate

9-10 Sep 1991

Firstpage

39

Lastpage

42

Abstract

A comparator circuit fabricated in an AlGaAs/GaAs heterojunction bipolar process is described. Nonlinear current gain, thermal effects, and parasitic base collector resistance have been included in the simulation model. The simulation model has been verified with measured data, which show a good match with data predicted by the simulation. At sampling rates up to 4 Gb/s at full Nyquist input frequency, the applicability of the comparator for high-speed analog-digital converters has been shown. Power consumption and input bias current must be taken into account when using it in high-resolution flash converters

Keywords

III-V semiconductors; aluminium compounds; bipolar integrated circuits; comparators (circuits); equivalent circuits; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; AlGaAs-GaAs; comparator circuit; heterojunction bipolar process; high-resolution flash converters; high-speed ADC; nonlinear current gain; parasitic base collector resistance; simulation model; thermal effects; Analog-digital conversion; Circuit simulation; Electrical resistance measurement; Energy consumption; Frequency conversion; Gallium arsenide; Heterojunctions; Predictive models; Sampling methods; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar Circuits and Technology Meeting, 1991., Proceedings of the 1991

Conference_Location

Minneapolis, MN

Print_ISBN

0-7803-0103-X

Type

conf

DOI

10.1109/BIPOL.1991.160952

Filename

160952