Title :
A fully monolithic, GaAs/AlGaAs HBT C-band transmitter
Author :
Maoz, Barak ; Bedard, Brian E. ; Oki, Aaron
Author_Institution :
Hittite Microwave Corp., Woburn, MA, USA
Abstract :
A novel C-band transmitter on a single chip has been implemented using GaAs/AlGaAs HBT (heterojunction bipolar transistor) technology. The chip includes a 4-GHz VCO with 300-MHz tunability, a medium-power amplifier, and a voltage regulator along with reactive matching networks. It measures 1.35×1.25×0.25 mm and operates from a single +10-V supply, In order to minimize chip cost, a process featuring a relaxed 3-μm emitter size, achieving f t of 24 GHz, was used. The transmitter output power measures +17 dBm at 4 GHz with noise side bands of -84 dBc at 100 kHz away from the carrier
Keywords :
III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; transmitters; 10 V; 3 micron; 4 GHz; C-band transmitter; GaAs-AlGaAs; HBT; MMIC; SHF; VCO; heterojunction bipolar transistor; medium-power amplifier; reactive matching networks; voltage regulator; Costs; Gallium arsenide; Heterojunction bipolar transistors; Power generation; Regulators; Semiconductor device measurement; Size measurement; Transmitters; Voltage; Voltage-controlled oscillators;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1991., Proceedings of the 1991
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-0103-X
DOI :
10.1109/BIPOL.1991.160954
