Title :
SOI 90-nm ring oscillator sub-ps model-hardware correlation and parasitic-aware optimization leading to 1.94-ps switching delay
Author :
Plouchart, Jean-Olivier ; Kim, Jonghae ; Gross, Blaine Jeffrey ; Wu, Kun ; Trzcinski, Robert ; Karam, Victor ; Hyde, Paul ; Williams, Richard ; Na, Myung-Hee ; Mc Cullen, J. ; Clark, William
Author_Institution :
IBM Semicond. Res. & Dev. Center, Hopewell Junction, NY
Abstract :
This paper reports the SOI 90 nm statistical model to hardware correlation achieved over a broad voltage, temperature and a variety of five different ring oscillators. Monte Carlo simulations were performed and compared with the measured circuit statistical population. A sub-ps model to hardware correlation accuracy was achieved between the mean hardware and simulated delays. Based on the model validation, a parasitic aware layout optimization was performed on a constrained and an unconstrained inverter leading to a 5 and 66 % reduction in delay of the inverter reference circuit. The unconstrained parasitic aware optimization achieves a record inverter switching delay of 1.94 ps
Keywords :
Monte Carlo methods; circuit optimisation; integrated circuit layout; integrated circuit modelling; nanotechnology; oscillators; reference circuits; silicon-on-insulator; 1.94 ps; 90 nm; Monte Carlo simulations; SOI ring oscillator; circuit statistical population; hardware correlation accuracy; inverter reference circuit; inverter switching delay; model-hardware correlation; parasitic aware layout optimization; parasitic-aware optimization; statistical model; sub-ps model; Capacitors; Circuit simulation; Delay; FETs; Hardware; Inverters; Optimized production technology; Ring oscillators; Steady-state; Wire;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609540