Title :
Photovoltaic characterization of Cu(InGa)Se2 and Cu(InAl)Se2 solar cells by photoassisted Kelvin probe force microscopy
Author :
Takihara, M. ; Minemoto, Takashi ; Wakisaka, Y. ; Yamada, S. ; Takahashi, T.
Author_Institution :
Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
Abstract :
We observed photovoltage as well as potential distribution around grain boundaries (GBs) in thin film solar cells based on Cu(InGa)Se2 (CIGS) and Cu(InAl) Se2 (CIAS) materials by the photoassisted Kelvin probe force microscopy (P-KFM) method we have originally proposed. As a result, the abrupt drop of the potential and the enhancement of photovoltage around the GBs was observed on both CIGS and CIAS materials. We also found that the typical value of the photovoltage on the CIAS solar cell was apparently higher than that on the CIGS cell.
Keywords :
aluminium compounds; atomic force microscopy; copper compounds; gallium compounds; grain boundaries; indium compounds; semiconductor thin films; solar cells; ternary semiconductors; CIAS materials; CIGS materials; CuInAlSe2; CuInGaSe2; grain boundaries; photoassisted Kelvin probe force microscopy; photovoltage; photovoltaic characterization; thin film solar cells; Artificial intelligence; Atomic force microscopy; Kelvin; Optical surface waves; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Probes; Solar power generation; Zinc oxide;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
DOI :
10.1109/PVSC.2009.5411620
