An implant-free AlGaAs/GaAs HBT IC technology incorporating 1.4 THz Schottky diodes

Author

Prasad, S.J. ; Vetanen, B. ; Haynes, C. ; Park, S. ; Beers, I. ; Diamond, S. ; Pubanz, G. ; Ebner, J. ; Sanielevici, S. ; Agoston, A.

Author_Institution

Tektronix, Beaverton, OR, USA

fYear

1991

fDate

9-10 Sep 1991

Firstpage

79

Lastpage

82

Abstract

A non-self-aligned HBT (heterojunction bipolar transistor) process capable of 45 GHz f_T and f_max with 1.4-THz Schottky diodes is reported. An HBT divide-by-eight prescalar circuit clocks at 13.5 GHz and a pulser circuit using Schottky diodes demonstrates 8.6-ps rise time. This process provides Schottky diodes suitable for sampler/pulser applications as well as nichrome resistors, MIM capacitors, and air-bridge inductors. The process does not use ion-implantation for isolation or reduction of collector capacitance

Keywords

III-V semiconductors; aluminium compounds; bipolar integrated circuits; digital integrated circuits; gallium arsenide; heterojunction bipolar transistors; integrated circuit technology; scaling circuits; 1.4 THz; 13.5 GHz; 45 GHz; 8.6 ps; AlGaAs-GaAs; HBT IC technology; MIM capacitors; Schottky diodes; air-bridge inductors; heterojunction bipolar transistor; implant-free process; nichrome resistors; prescalar circuit; pulser circuit; Capacitance; Capacitors; Circuits; Gallium arsenide; Gold; Heterojunction bipolar transistors; Inductors; Molecular beam epitaxial growth; Resistors; Schottky diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar Circuits and Technology Meeting, 1991., Proceedings of the 1991

Conference_Location

Minneapolis, MN

Print_ISBN

0-7803-0103-X

Type

conf

DOI

10.1109/BIPOL.1991.160961

Filename

160961