DocumentCode
3448254
Title
Effect of lattice strains in the measurement of the (220) lattice spacing of silicon
Author
Mana, Giovanni ; Palmisano, Carlo ; Zosi, Gianfranco
Author_Institution
Ist. di Metrologia G. Colonnetti, Torino
fYear
2004
fDate
38139
Firstpage
443
Lastpage
444
Abstract
The measurement of the Si lattice parameter a0 with an uncertainty lower than 10-8, requires to study the role of lattice strains of various kind. The Takagi´s approach has been used to study the modulation parameters of outgoing X-ray beams
Keywords
X-ray spectroscopy; crystal structure; lattice constants; silicon; (220) lattice spacing measurement; Takagi´s approach; X-ray beams; lattice parameter; lattice strains effect; silicon; Atomic measurements; Capacitive sensors; Density measurement; Equations; Finite element methods; Lattices; Optical modulation; Silicon; Spectroscopy; Strain measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Precision Electromagnetic Measurements Digest, 2004 Conference on
Conference_Location
London
Print_ISBN
0-7803-8494-6
Electronic_ISBN
0-7803-8494-6
Type
conf
DOI
10.1109/CPEM.2004.305301
Filename
4097312
Link To Document