Title :
Predictive modeling of thermal effects in BJTs
Author :
Fox, Robert M. ; Lee, Sang-Gug
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
Abstract :
The effects of self-heating on BJT (bipolar junction transistor) behavior are demonstrated through measurement and simulation. Most affected are the small-signal parameters Y22 and Y12. A frequency-domain solution to the heat-flow equation which applies to any rectangular emitter geometry is presented. This model, although simple enough for CAD, (computer-aided design) predicts thermal spreading impedance with good accuracy for a wide range of frequencies. The small-signal model has been implemented in SPICE
Keywords :
bipolar transistors; electronic engineering computing; semiconductor device models; thermal analysis; BJT; CAD; SPICE; bipolar junction transistor; computer-aided design; frequency-domain solution; heat-flow equation; rectangular emitter geometry; self-heating; small-signal model; small-signal parameters; thermal effects; thermal spreading impedance; Circuits; Electric variables measurement; Electrical resistance measurement; Equations; Heating; Impedance; Packaging; Predictive models; Temperature; Thermal resistance;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1991., Proceedings of the 1991
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-0103-X
DOI :
10.1109/BIPOL.1991.160963
