Impulse ion implanter

Author

Stepanov, A.V. ; Shamanin, V.I. ; Remnev, G.E. ; Petrov, A.V.

Author_Institution

Tomsk Polytech. Univ., Tomsk, Russia

fYear

2015

fDate

24-28 May 2015

Firstpage

1

Lastpage

1

Abstract

Summary form only given. The article presents high-current impulse implanter based on ion diode with Br-magnetic field and the preliminary plasma formation. Plasma formation at the anode is realized by a voltage negative pulse prior accelerating voltage pulse with a pause between the pulses of 500±50 ns. As the emissive coating of the anode graphite is used. The obtained ion beam has a current density in the focal plane of the diode to 80 A/cm². Elemental analysis showed the ion beam is mainly composed of carbon ions C⁺ and C⁺² and the protons H+. This work was supported RFBR and RSCF.

Keywords

anodes; current density; graphite; ion beams; plasma diodes; plasma immersion ion implantation; plasma production; plasma transport processes; Br-magnetic field; C; accelerating voltage pulse; anode graphite; current density; elemental analysis; emissive coating; high-current impulse implanter; impulse ion implanter; ion beam; ion diode; preliminary plasma formation; voltage negative pulse; Acceleration; Anodes; Coatings; Current density; Graphite; Ion beams; Plasmas;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Sciences (ICOPS), 2015 IEEE International Conference on

Conference_Location

Antalya

Type

conf

DOI

10.1109/PLASMA.2015.7179874

Filename

7179874