DocumentCode
3448342
Title
Density Measurement of Thin-Film by Pressure-of-Flotation Method
Author
Waseda, A. ; Fujii, K.
Author_Institution
National Metrol. Inst. of Japan, National Inst. of Adv. Ind. Sci. & Technol., Ibaraki
fYear
2004
fDate
38139
Firstpage
453
Lastpage
454
Abstract
Measurements on density differences of silicon crystals by pressure-of-flotation method (PFM) are presented. Temperature stability of the PFM apparatus is being unproved so that more accurate measurement is realized. The PFM is applied for the first time to measure density and thickness of surface layer on silicon crystals
Keywords
density measurement; elemental semiconductors; semiconductor thin films; stability; thickness measurement; PFM apparatus; Si; density measurement; pressure-of-flotation method; silicon crystals; surface layer; temperature stability; thickness measurement; thin-film; Crystals; Density measurement; Electrical resistance measurement; Silicon; Stability; Substrates; Temperature control; Thickness measurement; Time measurement; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Precision Electromagnetic Measurements Digest, 2004 Conference on
Conference_Location
London
Print_ISBN
0-7803-8494-6
Electronic_ISBN
0-7803-8494-6
Type
conf
DOI
10.1109/CPEM.2004.305306
Filename
4097317
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