Title :
Wideband integrated multiple laser chip on 1.55 /spl mu/m heterostructure using controlled bandgap tuning by quantum well intermixing
Author :
Aimez, V. ; Beauvais, J. ; Beerens, J. ; Lim, H.S. ; Ooi, B.S.
Author_Institution :
Dept. of Electr. Eng., Sherbrooke Univ., Que., Canada
Abstract :
Summary form only given. Quantum well intermixing (QWI) is a key technology for the fabrication of advanced photonic integrated components (PICs) requiring integration of multiple bandgap values over a 150 nm range on a single substrate. Standard MOCVD-grown, 1.55 /spl mu/m heterostructures with five quantum wells were used for this work.
Keywords :
MOCVD; ion implantation; laser transitions; laser tuning; masks; optical fabrication; photolithography; quantum well lasers; 1.55 /spl mu/m heterostructure; 1.55 micron; MOCVD-grown; advanced photonic integrated components fabrication; controlled bandgap tuning; heterostructures; multiple bandgap values; quantum well intermixing; quantum wells; single substrate; wideband integrated multiple laser chip; Annealing; Ion implantation; Laser theory; Laser tuning; Optical control; Optical device fabrication; Photonic band gap; Physics; Quantum well lasers; Wideband;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-662-1
DOI :
10.1109/CLEO.2001.947753
